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Design And Comparative Analysis Of 7nm SRAM Cells Using Double Gate FinFET Technology For Low- Power Memory Applications

B. Saritha,Dr.B. Satheesh

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ID: 3629

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Abstract :

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Published:

24-7-2026

Issue:

Vol. 26 No. 7 (2026)

Page Nos:

1205 - 1212

Section:

Articles

License:

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

How to Cite

B. Saritha,Dr.B. Satheesh , Design and Comparative Analysis of 7nm SRAM Cells using Double Gate FinFET Technology for Low- Power Memory Applications , 2026, International Journal of Engineering Sciences and Advanced Technology, 26(7), Page 1205 - 1212, ISSN No: 2250-3676.

DOI:

ISSN No:2250-3676 ----- Crossref DOI Prefix: 10.64771 ----- Impact Factor: 9.625